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hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 1 general description the hmf4m32b8v is a high-speed flash read only memo ry (from) module containing 8,388,608words organized in a x32bit configuration. the module consis ts of eight 1m x 16 from mounted on a 72-pin so-dimm type, double - sided, fr4- printed circuit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an inte rnal state-machine, which controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the progra mming and erase operations. reading data out of the device is similar to reading from 12.0v flash or eprom devices. output enable (/oe) and write enable (/we) can set the memory input and output. the host system can detect a program or erase operation is complete by observing the ready pin, or reading the dq7(data # polling) and dq6(toggle) status bits. when from module is disable condition t he module is becoming power standby mode, system designer can get low-power design. all module components may be pow ered from a single +3.0v dc power s upply and all inputs and outputs are lvttl- compatible. features pin assignment flash-rom module 16mbyte (4m x32bit), 72pin-so-dimm, 3.3v design part no. hmf4m32b8v pin symbol pin symbol pin symbol pin symbol 1 vss 21 dq15 41 dq29 61 a8 2 /reset 22 /ce_4l 42 dq30 62 a7 3 dq0 23 /ce_3h 43 dq31 63 a6 4 dq1 24 dq16 44 nc 64 a5 5 dq2 25 dq17 45 /ce_4h 65 a4 6 dq3 26 dq18 46 /ce_3l 66 a3 7 dq4 27 dq19 47 a19 67 a2 8 dq5 28 dq20 48 /oe 68 a1 9 dq6 29 dq21 49 /we 69 a0 10 vcc 30 vcc 50 a18 70 a20 11 dq7 31 dq22 51 a17 71 nc 12 /ce_1l 32 dq23 52 a16 72 vss 13 /ce_2l 33 /ce_1h 53 a15 14 dq8 34 /ce_2h 54 a14 15 dq9 35 dq24 55 a13 16 dq10 36 dq25 56 a12 17 dq11 37 dq26 57 a11 18 dq12 38 dq27 58 a10 19 dq13 39 vss 59 vcc 20 dq14 40 dq28 60 a9 ? access time: 70, 80, 90, 120ns ? high-density 16mbyte design ? high-reliability, low-power design ? single + 3.0v 0.5v power supply ? all in/outputs are lvttl-compatible ? fr4-pcb design ? minimum 10,000,000 write/erase cycle ? sector erases architecture options marking ? timing 70ns access -70 80ns access -80 90ns access -90 120ns access -120 ? packages 72-pin so-dimm b
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 2 functional block diagram truth table dq0 - dq31 a0 ? a20 32 a0-20 / we / oe dq 0-15 / ce u1 ry-by / reset a0-20 / we / oe dq 16-31 / ce u3 ry-by / reset /we 21 /oe /ce_2h /ry_by /reset a0-20 / we / oe dq 0-15 / ce u2 ry-by / reset a0-20 /we /oe dq 16-31 /ce u8 ry-by /reset /ce_ih /ce_il /ce_2l a0-20 /we / oe dq 0-15 /ce u5 ry-by /reset a0-20 /we /oe dq 16-31 / ce u6 ry-by /reset a0-20 /we /oe dq 0-15 /ce u7 ry-by /reset a0-20 / we / oe dq 16-31 / ce u4 ry-by / reset /ce_3l /ce_3h /ce_4l /ce_4h
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 3 mode /oe /ce /we /reset dq ( /byte=l ) power standby x h x vcc 0.3v high-z standby not selected h l h h high-z active read l l h h d out active write or erase x l l h d in active note : x means don?t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out -0.5v to vcc+0.5v voltage with respect to ground vcc v cc -0.5v to +4.0v storage temperature t stg -65 o c to +150 o c operating temperature t a -55 o c to +125 o c ? stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of t he device at these or any other conditions above those indicated in the operating section of this s pecification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc operating conditions parameter symbol min typ. max vcc for 10% device supply voltages vcc 2.7v 3.6v ground v ss 0 0 0 dc and operating characteristics ( 0 o c t a ( 70 oc ) parameter test conditions symbol min max unit input load current vcc=vcc max, vin= gnd to vcc il1 1.0 a output leakage current vcc=vcc max, v out = gnd to vcc i l0 1.0 a output high voltage i oh = -2.0ma, vcc = vcc min v oh 2.4 v output low voltage i ol = 4.0ma, vcc =vcc min v ol 0.45 v 5mhz 18 32 vcc active read current (1) /ce = v il , /oe = v ih , 1mhz i cc1 4 8 ma vcc active write current (2) /ce = v il , /oe=v ih i cc2 40 60 ma vcc standby current /ce, /reset=vcc 0.3v i cc3 40 ma low vcc lock-out voltage v lko 2.3 2.5 v notes : 1. the icc current listed is ty pically less than 2ma/mhz, with /oe at v ih . 2. icc active while embedded algorithm (program or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max erase and programming performance
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 4 limits parameter min. typ. max. unit comments sector erase time - 0.7 15 sec chip erase time 25 sec excludes 00h programming prior to erasure word programming time - 11 360 s chip programming time - 12 36 sec excludes system-level overhead tsop capacitance parameter symbol parameter description test setup min max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac characteristics ( read only operations characteristics ) parameter symbols speed options jedec standard description test setup -70r -80 -90 -120 unit t avav t rc read cycle time min 70 80 90 120 ns t avqv t acc address to output delay /ce =v il /oe = v il max 70 80 90 120 ns t elqv t ce chip enable to output delay /oe = v il max 70 80 90 120 ns t glqv t oe chip enable to output delay max 30 30 35 35 ns t ehqz t df chip enable to output high-z max 25 25 30 30 ns t ghqz t df output enable to output high-z max 25 25 30 30 ns t axqx t qh output hold time from addresses, /ce or /oe, whichever occurs first min 0 ns test specifications test condition 70r, 80 90, 120 unit output load 1ttl gate output load capacitance,c l (including jig capacitance) 30 100 pf input rise and full times 5 ns input pulse levels 0.0-3.0 v input timing measurement reference levels 1.5 v output timing measurement reference levels 1.5 v
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 5 ? erase/program operations parameter symbols speed options jedec standard description 70r 80 90 120 unit t avav t wc write cycle time min 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 45 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 s t whwh2 t whwh2 sector erase operat ion (note1) typ 0.7 sec t vcs vcc set up time min 50 s notes : 1 . this does not include the preprogramming time 2 . this timing is only for sector protect operations 5.0v device under test 2.7k ? diodes = in3064 or equivalent 6.2k ? in3064 or equivalent c l note : c l = 100pf including jig capacitance
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 6 ? erase/program operations alternate /ce controlled writes parameter symbols speed options jedec standard description -70r -80 -90 120 unit t avav t wc write cycle time min 70 80 90 12 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 50 ns t dvwh t ds data setup time min 35 35 45 50 ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recover time before write min 0 ns t elwl t cs /ce setup time min 0 ns t wheh t ch /ce hold time min 0 ns t wlwh t wp write pulse width min 35 35 35 50 ns t whwl t wph write pulse width high min 30 ns t whwh1 t whwh1 byte programming operation typ 9 s t whwh2 t whwh2 sector erase operat ion (note1) typ 0.7 sec notes : 1. this does not include the preprogramming time 2 . this timing is only for sector protect operations ? read operations timing
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 7 ? reset timing ? program operations timing alternate /we controlled writes alternate /ce controlled writes
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 8 ? chip/block erase operation timings ? data# polling times during internal routine operation
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 9 ? ry_ /by timeing during erase / program operation ? toggle# bit during internal routine operation
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 10 package dimensions
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 11 ordering information 1.0 0.1mm 3.4 mm max
hanbit hmf4m32b8v url : www. hbe.co.kr hanbit electronics co., ltd. rev.00(october,2003) 12 part number density org. package component number vcc speed hmf4m32b8v-70 16mbyte 4mx 32 72pin ?sodimm 8ea 3.3v 70ns hmf4m32b8v-80 16mbyte 4mx 32 72pin ?sodimm 8ea 3.3v 80ns hmf4m32b8v-90 16mbyte 4mx 32 72pin ?sodimm 8ea 3.3v 90ns HMF4M32B8V-120 16mbyte 4mx 32 72pin ?sodimm 8ea 3.3v 120ns

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